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MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA, U.S.A. Tel: 760-564-8656 * Fax 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
MAXTM 40 Series
HIGH CURRENT TRANSIENT VOLTAGE SUPPRESSOR (TVS) DIODE
STAND-OFF VOLTAGE 12 TO 150 Volts 40000 Watt Peak Pulse Power FEATURES
* Glass passivated junction * Bidirectional * 40000W Peak Pulse Power capability on 10x1000 s waveform * Excellent clamping capability * Repetition rate (duty cycle):0.05% * Sharp breakdown voltage * Low incremental surge resistance * Fast response time: typically less than 1.0 ps from 0 volts to BV * Typical IR less than 20A above 10V * Operation Tempature: -55C to +150C See Demensions on Page 4
MECHANICAL DATA
Terminals: Ag Plated Axial leads, solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight: 1.490 0.149g (0.053 0.005 ounces) DEVICES FOR BIPOLAR APPLICATIONS Bidirectional use CA Suffix. Electrical characteristics apply in both directions. Unidirectional A Suffix available as a special order MAXIMUM RATINGS AND CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified. RATING Peak Pulse Power Dissipation on 10/1000 s waveform Peak Pulse Current of on 10-1000 s waveform SYMBOL Pppm Ippm VALUE Minimum 20000 SEE CURVE UNITS Watts Amps
5/21/2009
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA. U.S.A. Tel: 760-564-8656 * Fax 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
MAX- 40TM Series
Cell Count 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 3 3 3 3 3 4 4 4 4 4 4 6 6 6 6 6 6 8 REVERSE STANDOFF VOLTAGE VRWM(V) 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 BREAKDOWN TEST PEAK VOLTAGE CURRENT PULSE VBR(V) IT CURRENT MIN. @IT Ipp (A) (mA) 14.0 15.2 16.4 17.6 18.8 19.9 21.1 23.4 25.7 28.1 30.4 32.8 35.1 38.7 42.1 46.8 50.3 52.7 56.1 59.7 63.2 67.8 70.2 74.9 81.9 87.7 91.3 99.2 105.5 117.0 128.5 140.0 151.5 176.0 50 50 50 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2010.1 1860.5 1724.1 1639.3 1538.5 1449.3 1369.6 1234.6 1126.8 1028.3 950.1 881.1 826.4 750.5 688.5 620.2 576.4 550.2 516.8 485.4 459.2 427.4 413.2 388.3 354.0 330.6 317.5 292.0 274.0 246.9 226.0 207.3 191.4 164.6 REVERSE LEAKAGE @ VRWM IR(A) 2000 2000 2000 500 200 50 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 MAXIMUM CLAMPING VOLTAGE @IPP VC (V) 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103.0 113.0 121.0 126.0 137.0 145 162 177 193 209 243
PART NUMBER
MAX40-12CA MAX40-13CA MAX40-14CA MAX40-15CA MAX40-16CA MAX40-17CA MAX40-18CA MAX40-20CA MAX40-22CA MAX40-24CA MAX40-26CA MAX40-28CA MAX40-30CA MAX40-33CA MAX40-36CA MAX40-40CA MAX40-43CA MAX40-45CA MAX40-48CA MAX40-51CA MAX40-54CA MAX40-58CA MAX40-60CA MAX40-64CA MAX40-70CA MAX40-75CA MAX40-78CA MAX40-85CA MAX40-90CA MAX40-100CA MAX40-110CA MAX40-120CA MAX40-130CA MAX40-150CA
5/21/2009
MAX-40 Rating Charactistic Curves
KW
10000 1000
Non-repetitive pulse waveform shown in Fig. 3TA = 25C
PEAK PULSE1
100
10
Pppm
1
1 0.1 1 10 100 1,000 10,000 100,000 td PULSE WIDTH 1 sec FIG. 1 PEAK PULSE POWER RATING
Fig.2 - Pulse Derating Curve
100
Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage,%
87.5 75 62.5 50 37.5 25 12.5 0 0 25 50 75 100 125 150 175 200
TA - Ambient Temperature (C)
150
IPPM - Peak Pulse Current,% IRSM
tr = 10sec. Peak Value IPPM 100 Half Value- I PPM 2
TJ = 25C Pulse Width(td)is defined as the point where the peak current decays to 50% of IPPM
50
10/1000sec.Waveform as defined by R.E.A.
td
0 0 1.0 2.0
3.0
3.0
4.0
4.0
t - Time(ms)
Fig.3 - Pulse Waveform
5/21/2009
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA, U.S.A. Tel: 760-564-8656 * Fax 760-564-2414 1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
MAXTM 40 Series Outline Dimensions
Stack 2 chip
0.1310.00984 (3.330.25) UNIT: Inch (mm)
Stack 3 chip
0.1620.00984 (4.120.25)
0.54 Max (13.72Max)
0.264 Max (6.7Max) 0.886 Min (22.5Min)
0.54 Max (13.72Ma)x
0.264 Max (6.7Max)
0.0490.002 (1.250.05) 0.4420.028 (11.220.71)
0.0490.002 (1.250.05) 0.4890.028 (12.420.71)
0.866 Min (22Min)
Stack 4 chip
0.1920.00984 (4.880.25) 0.54 Max (13.72Max) 0.54 Max (13.72Max) 0.838 Min (21.3Min) 0.0490.002 (1.250.05) 0.5190.028 (13.180.71)
Stack 6 chip
0.2520.00984 (6.410.25)
0.264 Max (6.7Max)
0.264 Max (6.7Max)
0.838 Min (21.3Min)
0.0490.002 (1.250.05)
0.5790.028 (14.710.71)
Stack 8 chip
0.360.018 (9.100.46) 0.54 Max (13.72Max)
0.29 Max (7.35Max) 0.787 Min (20.0Min)
0.0490.002 (1.250.05) 0.650.032 (16.500.83)
5/21/2009

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